✦ LIBER ✦

Nonequilibrium Green's function treatment of a new nanoscale dual-material double-gate MOSFET

✍ Scribed by Zahra Arefinia

Book ID: 104087203
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 454 KB
Volume: 43
Category: Article
ISSN: 1386-9477
DOI: 10.1016/j.physe.2011.01.010

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A new two-dimensional subthreshold behav

A new two-dimensional subthreshold behavior model for the short-channel asymmetrical dual-material double-gate (ADMDG) MOSFET’s

✍ Te-Kuang Chiang 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 724 KB

Dual-Material Double-Layer Gate Stack SO

Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part II: Impact of Gate-Dielectric Material Engineering

✍ Kasturi, P.; Saxena, M.; Gupta, M.; Gupta, R.S. 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 668 KB

Pearson-IV type doping distribution-base

Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

✍ Alok Kushwaha; Manoj K Pandey; A. K Gupta 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 316 KB

## Abstract A new two‐dimensional model for dual material double gate fully depleted SOI MOSFET is presented. An investigation of potential distribution in the silicon film is carried out with Pearson‐IV type doping distribution as it is essential to establish proper profiles to get the optimum per

Simulation of quantum transport in doubl

Simulation of quantum transport in double-gate MOSFETs using the non-equilibrium Green's function formalism in real-space: A comparison of four methods

✍ Yasser M. Sabry; Tarek M. Abdolkader; Wael F. Farouk 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 313 KB

Quantum effects play an important role in determining the double-gate (DG) MOSFETs characteristics. The non-equilibrium Green's function formalism (NEGF) in real-space (RS) representation provides a rigorous description of quantum transport in nanoscale devices. Unfortunately, the traditional NEGF f