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Nonequilibrium electron and spin properties in a parallel double quantum dot Fano interference device

✍ Scribed by C. Jiang; X. F. Xie; W. J. Gong; G. Z. Wei


Book ID
111623396
Publisher
Springer
Year
2010
Tongue
English
Weight
377 KB
Volume
75
Category
Article
ISSN
1434-6036

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A Feynman path analysis of the Fano effe
✍ Weijiang Gong; Yisong Zheng; Yu Liu; Tianquan LΓΌ πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 292 KB

We carry out a comprehensive analysis of Fano effect in electronic transport process through a parallel double quantum dot (QD) structure. First, we establish an expression of the linear conductance in the standard Fano form. This expression provides a uniform way to explain the presence of the Fano