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Nonadiabatic tunneling in the presence of an oscillating field

โœ Scribed by Martin, M.; Lefebvre, R.; Atabek, O.


Book ID
123606717
Publisher
The American Physical Society
Year
2002
Tongue
English
Weight
68 KB
Volume
65
Category
Article
ISSN
1050-2947

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Resonant tunneling in the presence of tw
โœ R. Lefebvre ๐Ÿ“‚ Article ๐Ÿ“… 2000 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 170 KB

The transmissivity of an electron incident on a nanostructure such as met in semiconductor devices is affected when the particle is interacting with an oscillating field. Since most experiments are done by applying also a static field (the "bias"), the two fields have to be simultaneously introduced