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Non-trivial GR and 1/f noise generated in the p-Si layer of SOI and SOS MOSFETs near the inverted front or buried p-Si/SiO2 interface

✍ Scribed by Lukyanchikova, N B; Petrichuk, M V; Garbar, N P; Simoen, E; Claeys, C


Book ID
111676594
Publisher
Institute of Physics
Year
1999
Tongue
English
Weight
301 KB
Volume
14
Category
Article
ISSN
0268-1242

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