𝔖 Bobbio Scriptorium

✦ LIBER ✦

Non-planar solid phase epitaxial growth processes in ion-implanted GaAs

✍ Scribed by J.S. Williams; F.M. Adams; K.G. Rossiter

Publisher: Elsevier Science
Year: 1982
Tongue: English
Weight: 384 KB
Volume: 93
Category: Article
ISSN: 0040-6090
DOI: 10.1016/0040-6090(82)90103-1

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Interface structures during solid-phase-

Interface structures during solid-phase-epitaxial growth in ion-implanted semiconductors and a crystallization model: J Narayan,J Appl Phys, 53 (12), 1982, 8607–8614

📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 175 KB

Planar, ion-implanted bipolar devices in

Planar, ion-implanted bipolar devices in GaAs : K. V. Vaidyanathan, R. A. Jullens, C. L. Anderson and H. L. Dunlap. Solid-St. Electron.26 (8) 717 (1983)

📂 Article 📅 1984 🏛 Elsevier Science 🌐 English ⚖ 86 KB

Cross-sectional transmission electron mi

Cross-sectional transmission electron microscope study of intrinsic solid-phase epitaxial growth in self-ion-implanted (001) Si: C W Nieh and L J Chen, J appl Phys, 63, 1988, 575–577

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 149 KB