A procedure is described for estimating various parameters governing the diffusion of impurities in semiconductors; these parameters are required for a number of explicit numerical models of non-linear diffusion in III-V crystals. The method is based on an analytical solution of the continuum equiva
Non-linear diffusion in process modelling
β Scribed by M. J. Baines; N. R. C. Birkett; P. K. Sweby
- Publisher
- John Wiley and Sons
- Year
- 1990
- Tongue
- English
- Weight
- 748 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0894-3370
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β¦ Synopsis
The non-linear diffusion mechanism arising in process modelling is analysed via a model problem. Using a scaling of the dopant concentration and an adaptive finite element method, high resolution is obtained in a particularly economical way.
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