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Non-equilibrium Green functions method in the problem of optical nonlinearities

โœ Scribed by M.P. Lisitsa; A.M. Yaremko; R.A. Taratuta


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
443 KB
Volume
105
Category
Article
ISSN
0030-4018

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Quantum effects play an important role in determining the double-gate (DG) MOSFETs characteristics. The non-equilibrium Green's function formalism (NEGF) in real-space (RS) representation provides a rigorous description of quantum transport in nanoscale devices. Unfortunately, the traditional NEGF f