Non-destructive patterning of conducting-polymer devices using subtractive photolithography
✍ Scribed by C. Balocco; L.A. Majewski; A.M. Song
- Book ID
- 103877102
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 788 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1566-1199
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✦ Synopsis
We demonstrate a non-destructive, high-throughput, and high-resolution lithographic patterning method to fabricate organic-semiconductor devices based on UV lithography with the standard equipment of well-established silicon technology. The method is applied to fabricate poly(3-hexylthiophene) (P3HT)-based organic thin-film transistors (OTFTs) with high yield. Patterns with features down to 2 lm are reproducibly demonstrated. We show that a few modifications in the processing steps are necessary in order to spin-coat photoresist onto P3HT films and to completely remove P3HT residues on the substrates that have been treated with a self-assembled monolayer. Compared with OTFTs whose P3HT channels are not patterned, the on/off ratio of the patterned devices is improved by over four orders of magnitude from about 70 to 10 6 , because of the dramatically reduced gate leakage current. The extracted carrier mobility is not only virtually unchanged after the lithography processes, but also as high as 0.027 cm 2 /V s. Both the on/off ratio and the mobility are among the best reported values in P3HT-based OTFTs fabricated and measured in ambient conditions.