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Noise parameters and light sensitivity of low-noise high-electron-mobility transistors at 300 and 12.5 K

✍ Scribed by Pospieszalski, M.W.; Weinreb, S.; Pane-Chane Chao; Mishra, U.K.; Palmateer, S.C.; Smith, P.M.; Hwang, J.C.M.

Book ID
114595496
Publisher
IEEE
Year
1986
Tongue
English
Weight
813 KB
Volume
33
Category
Article
ISSN
0018-9383

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## Abstract This paper evaluates microwave performance in terms of scattering parameters and gains and presents the effect of gate‐to‐drain capacitance __C__~__gd__~ on the noise behavior of a pseudomorphic high‐electron mobility transistor (PHEMT). An analytical expression for __C__~__gd__~ is obt