Noise model of a reverse-biased cold-FET applied to the characterization of its ENR
✍ Scribed by M. C. Maya; A. Lázaro; L. Pradell
- Publisher
- John Wiley and Sons
- Year
- 2004
- Tongue
- English
- Weight
- 137 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
This paper presents a broadband‐noise circuit model for a “cold”‐FET (V~ds~ = 0 V) with a reverse‐biased gate. The noise model includes two intrinsic uncorrelated noise‐current sources whose spectral densities are determined from measurement of the device's S parameters and noise powers. The model is used to characterize the device's excess noise ratio (ENR) for application to full receiver‐noise calibration. Experimental results up to 40 GHz are given. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 40: 326–330, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.11370