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NO2 dissociation and O penetration at a GaAs(110) surface

✍ Scribed by C.C. Bahr; A. vom Felde; M.J. Cardillo

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
565 KB
Volume
54-55
Category
Article
ISSN
0368-2048

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πŸ“œ SIMILAR VOLUMES

Competition between desorption and diffu
Competition between desorption and diffusion at a GaAs(110) surface
✍ A. vom Felde; C.C. Bahr; M.J. Cardillo πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 471 KB

We directly demonstrate for NOr on GaAs( 1 lo), using time-resolved modulated molecular beam techniques, that desorption is a competitive rate process with surface diffusion. Using defects as markers, we observe a transition from defect-dominated low coverage chemistry to defect insensitive adsorpti