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NO2 detection by a resistive device based on n-InP epitaxial layers

โœ Scribed by L. Talazac; J.P. Blanc; J.P. Germain; A. Pauly


Book ID
108471078
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
153 KB
Volume
59
Category
Article
ISSN
0925-4005

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This paper deals with the influence of technological process steps on electrical and metrological parameters of NO 2 gas sensors. The NO 2 gas sensors are based on thin n-InP epitaxial layers. The NO 2 gas action makes the resistance of the device, measured in parallel to the surface between ohmic c