Nitrous oxide gas phase chemistry during silicon oxynitride film growth

✍ Scribed by A. Gupta; S. Toby; E.P. Gusev; H.C. Lu; Y. Li; M.L. Green; T. Gustafsson; E. Garfunkel

• Book ID: 104270554
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 587 KB
• Volume: 59
• Category: Article
• ISSN: 0079-6816
• DOI: 10.1016/s0079-6816(98)00039-2

✦ Synopsis

NZO gas phase chemistry has been examined as it relates to the problem of ultrathin film silicon oxynitridation for semiconductor devices. Computational and analytical kinetics studies are presented that demonstrate: (i) there are 5 main reactions in the decomposition of NzO, (ii) the gas composition over a lOOOK -1400K temperature range is as follows: NZ (65.3 -59.3%); 02 (32.0 -25.7%); NO (2.7 -15.0%), (iii) the NzO decomposition obeys first-order kinetics, and the initial rate law for N20 decomposition is Ra = 2klw20] which rapidly changes to h&e = kl[NzO] as the reaction proceeds, (iv) the branching ratio for the two reactions: N20 + 0 + 2N0 and N20 + 0 3 N2 + 02 lies between 0.1 and 0.5 (0.1 < a < 0.5) and varies with conditions, (v) the apparent activation energy for the decomposition of N20 is 2.5 eV/molecule (2.4~10~ kJ/mole), (vi) the rate law for NO formation is R = k$NzOl; and (vii) the apparent activation energy for the formation of NO is 2.4 eV/molecule (2.3x10 Id/mole).