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Nitrogen in silicon: Diffusion at 500–750 °C and interaction with dislocations

✍ Scribed by C.R. Alpass; J.D. Murphy; R.J. Falster; P.R. Wilshaw


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
260 KB
Volume
159-160
Category
Article
ISSN
0921-5107

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