✍ Scribed by Ruterana, Pierre; Albrecht, Martin; Neugebauer, Jörg
No coin nor oath required. For personal study only.
Pt. 1. Material -- 1. High-pressure Crystallization Of Gan / Izabella Grzegory, Stanislaw Krukowski, Michael Leszczynski, Piotr Perlin, Tadeusz Suski And Sylwester Porowski -- 2. Epitaxial Lateral Overgrowth Of Gan / Pierre Gibart, Bernard Beaumont And Philippe Vennegues -- 3. Plasma-assisted Molecular Beam Epitaxy Of Iii-v Nitrides / Alexandros Georgakilas, Hock Min Ng And Philomela Komninou -- 4. Growth Of Gallium Nitride By Hydride Vapor Phase Epitaxy / Agnes Trassoudaine, Robert Cadoret And Eric Aujol -- 5. Growth And Properties Of Inn / Valery Davydov, Albert Klochikhin, Sergey Ivanov, Jochen Aderhold And Akio Yamamoto -- 6. Surface Structure And Adatom Kinetics Of Group-iii Nitrides / Jorg Neugebauer -- Pt. 2. Defects And Interfaces -- 7. Topological Analysis Of Defects In Nitride Semiconductors / Georgios P. Dimitrakopulos, Philomela Komninou, Theodoros Karakostas And Robert C. Pond -- 8. Extended Defects In Wurtzite Gan Layers: Atomic Structure, Formation, And Interaction Mechanisms / Pierre Ruterana, Ana M. Sanchez And Gerard Nouet -- 9. Strain, Chemical Composition, And Defects Analysis At Atomic Level In Gan-based Epitaxial Layers / Slawomir Kret, Pierre Ruterana, Claude Delamarre, Tarek Benabbas And Pawel Dluzewski -- Pt. 3. Processing And Devices -- 10. Ohmic Contracts To Gan / Philip J. Hartlieb, Robert F. Davis And Robert J. Nemanich -- 11. Electroluminescent Diodes And Laser Diodes / Hiroshi Amano -- 12. Gan-based Modulation-doped Fets And Heterojunction Bipolar Transistors / Hadis Morkoc And Lianghong Liu -- 13. Gan-based Uv Photodetectors / Franck Omnes And Eva Monroy. [edited By] Pierre Ruterana, Martin Albrecht, Jörg Neugebauer. Includes Bibliographical References And Index.
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