Nitride Semiconductor Light-Emitting Diodes (LEDs). Materials, Technologies and Applications

✍ Scribed by J-J Huang, H-C Kuo and S-C Shen (Auth.)

• Publisher: Woodhead Publishing
• Year: 2014
• Tongue: English
• Leaves: 653
• Series: LEDs): Materials, Technologies and Applications (Woodhead Publishing Series in Electronic and Optical Materials
• Edition: 1
• Category: Library

✦ Synopsis

The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations.

Part one reviews the fabrication of nitride semiconductor LEDs. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques and the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed. Part two covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and the fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs. Finally, part three highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infrared emitters, and automotive lighting.

Nitride Semiconductor Light-Emitting Diodes (LEDs) is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.

• Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development, and practical nitride-based LED design considerations
• Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots
• Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting

✦ Table of Contents

Content:
Front matter, Pages i-iii
Copyright, Page iv
Contributor contact details, Pages xiii-xvi
Woodhead Publishing Series in Electronic and Optical Materials, Pages xvii-xxi
Dedication, Page xxii
Preface, Pages xxiii-xxvi
1 - Molecular beam epitaxy (MBE) growth of nitride semiconductors, Pages 3-26
2 - Modern metal-organic chemical vapor deposition (MOCVD) reactors and growing nitride-based materials, Pages 27-65
3 - Gallium nitride (GaN) on sapphire substrates for visible LEDs, Pages 66-98
4 - Gallium nitride (GaN) on silicon substrates for LEDs, Pages 99-143
5 - Phosphors for white LEDs, Pages 144-180
6 - Fabrication of nitride LEDs, Pages 181-215
7 - Nanostructured LEDs, Pages 216-249
8 - Nonpolar and semipolar LEDs, Pages 250-275
9 - Efficiency droop in gallium indium nitride (GaInN)/gallium nitride (GaN) LEDs, Pages 279-300
10 - Photonic crystal nitride LEDs, Pages 301-330,331e-350e,331-354
11 - Surface plasmon enhanced LEDs, Pages 355-367
12 - Nitride LEDs based on quantum wells and quantum dots, Pages 368-408
13 - Color tunable LEDs, Pages 409-427
14 - Reliability of nitride LEDs, Pages 428-440
15 - Chip packaging: encapsulation of nitride LEDs, Pages 441-481
16 - White LEDs for lighting applications: the role of standards, Pages 485-496
17 - Ultraviolet LEDs, Pages 497-532
18 - Infrared emitters made from III-nitride semiconductors, Pages 533-565
19 - LEDs for liquid crystal display (LCD) backlighting, Pages 566-594
20 - LEDs in automotive lighting, Pages 595-605
Index, Pages 607-624