Nitride Semiconductor Devices: Principles and Simulation

• Year: 2007
• Tongue: English
• Leaves: 501
• Category: Library

✦ Synopsis

This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication.
This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.

✦ Table of Contents

Content:
Chapter 1 Introduction (pages 1–11): Joachim Piprek
Chapter 2 Electron Bandstructure Parameters (pages 13–48): Igor Vurgaftman and Jerry R. Meyer
Chapter 3 Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes (pages 49–68): Fabio Bernardini
Chapter 4 Transport Parameters for Electrons and Holes (pages 69–93): Enrico Bellotti and Francesco Bertazzi
Chapter 5 Optical Constants of Bulk Nitrides (pages 95–115): Rudiger Goldhahn, Carsten Buchheim, Pascal Schley, Andreas Theo Winzer and Hans Wenzel
Chapter 6 Intersubband Absorption in AlGaN/GaN Quantum Wells (pages 117–143): Sulakshana Gunna, Francesco Bertazzi, Roberto Paiella and Enrico Bellotti
Chapter 7 Interband Transitions in InGaN Quantum Wells (pages 145–167): Jorg Hader, Jerome V. Moloney, Angela Thranhardt and Stephan W. Koch
Chapter 8 Electronic and Optical Properties of GaN?based Quantum Wells with (1010) Crystal Orientation (pages 169–190): Seoung?Hwan Park and Shun?Lien Chuang
Chapter 9 Carrier Scattering in Quantum?Dot Systems (pages 191–209): Frank Jahnke
Chapter 10 AlGaN/GaN High Electron Mobility Transistors (pages 211–233): Tomas Palacios and Umesh K. Mishra
Chapter 11 Intersubband Optical Switches for Optical Communications (pages 235–252): Nobuo Suzuki
Chapter 12 Intersubband Electroabsorption Modulator (pages 253–277): Petter Holmstrom
Chapter 13 Ultraviolet Light?Emitting Diodes (pages 279–301): Yen?Kuang Kuo, Sheng?Horng Yen and Jun?Rong Chen
Chapter 14 Visible Light?Emitting Diodes (pages 303–325): Sergey Yu. Karpov
Chapter 15 Simulation of LEDs with Phosphorescent Media for the Generation of White Light (pages 327–351): Norbert Linder, Dominik Eisert, Frank Jermann and Dirk Berben
Chapter 16 Fundamental Characteristics of Edge?Emitting Lasers (pages 353–379): Gen?Ichi Hatakoshi
Chapter 17 Resonant Internal Transverse?Mode Coupling in InGaN/GaN/AlGaN Lasers (pages 381–404): Gennady A. Smolyakov and Marek Osinski
Chapter 18 Optical Properties of Edge?Emitting Lasers: Measurement and Simulation (pages 405–422): Ulrich T. Schwarz and Bernd Witzigmann
Chapter 19 Electronic Properties of InGaN/GaN Vertical?Cavity Lasers (pages 423–445): Joachim Piprek, Zhan?Ming Li, Robert Farrell, Steven P. DenBaars and Shuji Nakamura
Chapter 20 Optical Design of Vertical?Cavity Lasers (pages 447–466): Wlodzimierz Nakwaski, Tomasz Czyszanowski and Robert P. Sarzala
Chapter 21 GaN Nanowire Lasers (pages 467–491): Alexey V. Maslov and Cun?zheng Ning