Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

✍ Scribed by Mosca, M. ;Nicolay, S. ;Feltin, E. ;Carlin, J.-F. ;Butté, R. ;Ilegems, M. ;Grandjean, N. ;Tchernycheva, M. ;Nevou, L. ;Julien, F. H.

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 187 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200622483

✦ Synopsis

Abstract

Intersubband (ISB) optical absorption in different nitride‐based heterostructures grown by metal‐organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi‐quantum wells (MQWs) is investigated. At high concentration (15%) AlInN is quasi lattice‐matched to GaN and no cracks appear in the structure. At very low indium concentration (∼2%) the material quality is improved without decreasing the ISB transition wavelength with respect to the case of indium‐free structures. Different mechanisms of strain relaxation in pure and 2% indium‐doped AlN/GaN MQW structures are also investigated. ISB transition wavelengths of 2 μm for AlN/GaN MQWs, and 3 μm for AlInN/GaN MQWs with 15% of In are achieved. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)