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Ni/Ti ohmic and Schottky contacts on 4H-SiC formed with a single thermal treatment

✍ Scribed by Pérez, R.; Mestres, N.; Tournier, D.; Godignon, P.; Millán, J.

Book ID
121477863
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
286 KB
Volume
14
Category
Article
ISSN
0925-9635

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Barrier inhomogeneities and electrical c
Barrier inhomogeneities and electrical characteristics of Ni/Ti bilayer Schottky contacts on 4H-SiC after high temperature treatments
✍ Pérez, R. ;Mestres, N. ;Montserrat, J. ;Tournier, D. ;Godignon, P. 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 127 KB

## Abstract The analysis of “nonideal” behaviour in current–voltage characteristics of fabricated Schottky diodes on 4H–SiC is carried out. An accurate theoretical modelling of the effect of the presence of inhomogeneities on the electron transport across the metal‐semiconductor interface is applie