Nickel silicide formation by electroless technique for ULSI technology
✍ Scribed by Anuj Kumar; Mukesh Kumar; Amanpal Singh; Satinder Kumar; Dinesh Kumar
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 458 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
In this paper we report on the formation of nickel silicide by electroless process. The nickel plating solution was composed of a mixture of NiSO 4 Á6H 2 O, NaH 2 PO 2 ÁH 2 O, Na 3 C 6 H 5 O 7 , and NH 4 Cl, where NiSO 4 Á6H 2 O is the main nickel source and NaH 2 PO 2 ÁH 2 O is the reducing agent. The nickel silicide formation was carried out by heating the deposited samples in vacuum at temperatures from 100 °C to 800 °C. The evolution of NiSi phase from the nickel film was verified using the X-ray diffraction technique and Raman spectroscopy. The surface morphology was studied using AFM technique. The electroless plating technique can provide a cheap and easy process for forming nickel silicide, and has potentiality of application for the electronic device industries.