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Nickel Germanosilicide contacts formed on heavily boron doped Si1-xGex source/drain junctions for nanoscale CMOS

✍ Scribed by Jing Liu; Ozturk, M.C.


Book ID
114617845
Publisher
IEEE
Year
2005
Tongue
English
Weight
713 KB
Volume
52
Category
Article
ISSN
0018-9383

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