New technique makes epitaxial structure characterisation faster and simpler
✍ Scribed by S. Bates; T.W. Ryan
- Publisher
- Elsevier Science
- Year
- 1990
- Tongue
- English
- Weight
- 816 KB
- Volume
- 3
- Category
- Article
- ISSN
- 0959-3527
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✦ Synopsis
H
igh Resolution X-Ray Diffraction (HR-XRD) is well established as a first-line non-destructive analytical tool for the measurement of lattice mismatch andin the case of binary and ternary alloyscomposition. In principle the interpretation of results is simple. The angular separation of layer and substrate Bragg peaks is related to the lattice mismatch, and composition is determined from the mismatch by application of Vegard's law.
USEFUL INFORMATION
However, an HR-XRD measurement can reveal a great deal more information about the nature of a compound semiconductor. In particular, the interference
New Technique Makes Epitaxial Structure Characterisation Faster and Simpler
High Resolution X-Ray Diffraction is used to establish the composition and thickness of epitaxial layers. Now, a new mathematical treatment permits reliable interpretation of data obtained from even highly complex epitaxial structures. Measurement of layer thickness is rapid, semi-automated and accurate to within one or two percent.