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New spectroscopic data of erbium ions in GaN thin films

✍ Scribed by F. Pellé; F. Auzel; J.M. Zavada; D.S. Lee; A.J. Steckl

Book ID
108214972
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
257 KB
Volume
105
Category
Article
ISSN
0921-5107

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Lithium ions with dosages of 2.6 Â 10 12 , 2.6 Â 10 13 , 2.6 Â 10 14 , and 2.6 Â 10 15 cm À2 have been implanted into a GaN thin film grown on sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass