New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes
✍ Scribed by M.J Loboda
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 230 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
Trimethylsilane, (CH ) SiH, is a non-pyrophoric organosilicon gas. This material is easily used to deposit dielectric thin 3 3 films in standard PECVD systems designed for SiH . In addition to deposition of standard dielectrics (e.g. SiO ), 4 2 trimethylsilane can be used to deposit reduced permittivity (low-k) dielectric versions of amorphous hydrogenated silicon carbide and its oxides. The low-k carbides (k , 5.5) are highly insulating and useful as hard masks, etch stops and copper diffusion barriers. The low-k oxides (2.6 , k , 3.0) are useful as intermetal dielectrics, and exhibit stability and electrical properties which can meet many specifications in device fabrication that are now placed on SiO . This paper reviews 2 PECVD processing using trimethylsilane. Examples will show that the 3MS-based dielectrics can be used in place of SiH -based oxides and nitrides in advanced device multilevel metal interconnection schemes to provide improved circuit 4 performance.