✦ LIBER ✦
New Simulation Method to Characterize the Recoverable Component of Dynamic Negative-Bias Temperature Instability inp-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
✍ Scribed by Hussin, H.; Soin, N.; Bukhori, M.F.; Abdul Wahab, Y.; Shahabuddin, S.
- Book ID
- 125373859
- Publisher
- Springer US
- Year
- 2014
- Tongue
- English
- Weight
- 610 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0361-5235
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