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New model of gate-induced drain current density in an NMOS transistor

✍ Scribed by A. Bouhdada; A. Touhami; S. Bakkali

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 265 KB
Volume: 29
Category: Article
ISSN: 0026-2692
DOI: 10.1016/s0026-2692(97)00029-3

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