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New method of domain inversion in LiNbO3 using thermal oxidation of Ti film

✍ Scribed by Endoh, H.; Sampei, Y.; Miyagawa, Y.

Book ID: 124061810
Publisher: The Institution of Electrical Engineers
Year: 1992
Tongue: English
Weight: 327 KB
Volume: 28
Category: Article
ISSN: 0013-5194
DOI: 10.1049/el:19921015

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## Abstract As a precursor material for electrooptical applications in the integrated optics, nominal pure as well as Zn‐doped stoichiometric LiNbO~3~ thin films of a few µm thickness were grown by liquid phase epitaxy on congruent LiNbO~3~ substrates. The crystalline perfection and lattice paramet