New MBE growth method for high quality InN and related alloys usingin situmonitoring technology
✍ Scribed by Yamaguchi, Tomohiro ;Nanishi, Yasushi
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 374 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
A new radio‐frequency plasma‐assisted molecular beam epitaxy (RF‐MBE) method, named droplet elimination by radical beam irradiation (DERI), is utilized for the growth of InN. This method is composed of two series of growth processes: (1) InN growth under an In‐rich condition and (2) consecutive nitrogen radical beam irradiation. This method is simple, enabling the reproducible growth of a high‐quality thick InN film with a flat surface. This method is also effective for monitoring a nitrogen radical beam that is responsible for InN growth. This new growth method is also applied to InGaN growth. The results indicate a preferable Ga capturing process on an InGaN growing surface, particularly when the samples are grown under a metal‐rich condition.