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New insight into high-field mobility enhancement of nitrided-oxide N-MOSFET's based on noise measurement

✍ Scribed by Ma, Z.J.; Liu, Z.H.; Yiu Chung Cheng; Ko, P.K.; Chenming Hu


Book ID
114535935
Publisher
IEEE
Year
1994
Tongue
English
Weight
470 KB
Volume
41
Category
Article
ISSN
0018-9383

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