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New generation of Self Ionized Plasma copper seed for sub 40 nm nodes

✍ Scribed by J. Guillan; K. Haxaire; S. Chhun; E. Richard; M.C. Luche; L. Arnaud; E. Petitprez; C. Monget; D. Galpin; P. Normandon


Book ID
104052720
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
540 KB
Volume
88
Category
Article
ISSN
0167-9317

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✦ Synopsis


Two seed deposition hardware are compared in this paper: a standard Self Ionized Plasma (SIP) standard chamber and a new generation chamber allowing Cu deposition and re-sputtering simultaneously. TEM characterizations exhibits better features coverage for new seed generation thank to process fine tuning. It induces defectivity improvement and void density is reduced with new hardware. Furthermore, reliability performances are improved without degrading parametrical results.