TiN barriers for high-k capacitors: simu
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T. Theiler; N. Sacher; B. Froeschle
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Article
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2001
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Elsevier Science
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English
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High k dielectric materials have drawn a lot of attention for gate dielectric applications as substitutes for SiO in future 2 ULSI devices and storage capacitors in GBit DRAMs. Tunneling currents become a major problem with shrinking device geometries. Capacitor stacks with high k dielectrics like B