New electronic emission from SiCl2
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Hiroshi Sekiya; Yukio Nishimura; Masaharu Tsuji
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Article
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1991
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Elsevier Science
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English
β 330 KB
New electronic emission from SiCl, has been detected in the region 5000-6200 A from the reactions of Ar(3Pz,o) with SiCI, and SiH2C12 in a dc discharge flow. The emission system has been assigned as %-'AI. The upper state bending frequency has been measured to be 164f 2 cm-'.