๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

New dopant precursors for n-type and p-type GaN

โœ Scribed by Y. Ohuchi; K. Tadatomo; H. Nakayama; N. Kaneda; T. Detchprohm; K. Hiramatsu; N. Sawaki


Book ID
108342257
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
216 KB
Volume
170
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Local p-type conductivity in n-GaN and n
โœ A. Krtschil; D.C. Look; Z.-Q. Fang; A. Dadgar; A. Diez; A. Krost ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 234 KB

We report on scanning capacitance microscopy (SCM) investigations of Fe-doped GaN and nitrogen-doped ZnO layers. Macroscopically, these samples electrically behave in conventional I-V and C-V measurements like semi-insulating or n-type material, respectively. However, in SCM we found local p-type re

Band-Edge Potentials of n-Type and p-Typ
โœ Beach, J. D.; Collins, R. T.; Turner, J. A. ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› The Electrochemical Society ๐ŸŒ English โš– 141 KB
Thermopower investigation of n - and p -
โœ Brandt, M. S.; Herbst, P.; Angerer, H.; Ambacher, O.; Stutzmann, M. ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› The American Physical Society ๐ŸŒ English โš– 131 KB
Comparison of the p-type dopants K and N
โœ H. Stewart; J. Simpson; S.Y. Wang; I. Hauksson; S.J.A. Adams; K.A. Prior; B.C. C ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 274 KB