## Abstract This paper describes an artificial‐neural‐network (ANN) based non‐linear modeling of deep‐submicron CMOS for RF applications. The neural network model is concise when compared to the conventional modeling approach based on empirical equations and can demonstrate comparable accuracy. The
Neural network based time domain modelling of 0.18 μm MOSFETs
✍ Scribed by B. Toner; M. S. Alam; V. F. Fusco; G. A. Armstrong
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 437 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this paper a new time domain based neural network model of a 0.18 μm RF MOSFET will be demonstrated. The model consists of only three intrinsic non‐linear current sources, each being modelled by a neural network derived from large signal time domain voltage/current waveform measurements at the intrinsic device terminals. This approach negates the traditional method of multi‐bias S‐parameter measurement providing a fast and accurate method of modelling the transistor under large signal conditions. Full verification of the model will be provided against an 80 μm/0.18 μm MOSFET operating at 2.4 GHz. © 2002 Wiley Periodicals, Inc. Microwave Opt Technol Lett 35: 203–206, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.10558
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