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Negative terahertz dynamic conductivity in electrically induced lateral p–i–n junction in graphene

✍ Scribed by Victor Ryzhii; Maxim Ryzhii; Michael S. Shur; Vladimir Mitin


Book ID
104086674
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
248 KB
Volume
42
Category
Article
ISSN
1386-9477

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✦ Synopsis


We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators