Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications

✍ Scribed by Young Suh Song

• Publisher: CRC
• Year: 2024
• Tongue: English
• Leaves: 149
• Category: Library

✦ Synopsis

"This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. . Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign"--

✦ Table of Contents

Cover
Half Title
Series Information
Title Page
Copyright Page
Table of Contents
Preface
1 Recent Challenges in the IT and Semiconductor Industry: From Von Neumann Architecture to the Future
1.1 Introduction
1.2 Basic Architecture of a Computer
1.3 Practice: How to Check What Kind of CPU Your Computer Has
1.4 Von Neuman Architecture
1.5 Conclusion
Acknowledgments
References
2 Technical Demands of Low-Power Electronics
2.1 Introduction
2.2 Technical Demand Investigation for Low-Power Uses
2.3 Challenges of Conventional CMOS Technology
2.4 Quantum Dot Cellular Automata Technology
2.5 Negative Capacitance Field Effect Transistors (NC-FETs)
2.6 Conclusion
References
3 Negative Capacitance Field Effect Transistors: Concept and Technology
3.1 Introduction
3.2 Negative Capacitance Technology
3.3 Pseudo-Analytical Solution Procedure for Negative Capacitance
3.4 Negative Capacitance Stability
3.5 Ferroelectric Materials and Their Compatibility With Negative Capacitance Technology
3.6 Transistors With Negative Capacitance
3.7 Ferroelectrics in the Gate Stack of a Transistor
3.8 Experimental Investigation of Negative Capacitance
3.9 Temperature Effect
3.10 Conclusion
References
4 Basic Operation Principle of Negative Capacitance Field Effect Transistor
4.1 Introduction
4.1.1 Background
4.1.2 Ferroelectrics
4.1.3 Negative Capacitance
4.2 Basic Operation Principles of Negative Capacitance Field Effect Transistors
4.2.2 Metal Ferroelectric Insulator Metal Capacitor
4.3 Conclusion
References
5 Basic Operational Principle of Anti- Ferroelectric and Ferroelectric Materials
5.1 Introduction
5.2 Negative Capacitance
5.3 Origins of Negative Capacitance in Ferroelectrics
5.3.1 Transient Negative Capacitance
5.3.2 Stabilized Negative Capacitance
5.4 Origin of Negative Capacitance in Antiferroelectric
5.5 Stoichiometric Configuration Role in Negative Capacitance
5.6 Conclusion
References
6 Basic Operation Principle of Optimized NCFET: Amplification Perspective
6.1 Introduction
6.2 Basics of Negative Capacitance Materials
6.3 NCFET Overview
6.4 NCFET Basic Operation
6.5 NCFET Features
6.6 Modeling Approaches: NCFET
6.7 Conclusion
6.8 Future Scope
References
7 Spin-Based Magnetic Devices With Spintronics
7.1 Introduction
7.2 Spintronic Devices
7.3 Spin Valve
7.4 Magnetic Tunnel Junction
7.5 Magnetic Tunnel Junction (MTJ) Writing Techniques
7.6 Field-Induced Magnetic Switching (FIMS)
7.7 Thermal-Assisted Switching (TAS)
7.8 Conclusion
References
8 Mathematical Approach for a Future Semiconductor Roadmap
8.1 Introduction
8.2 Power Factor With Scaled MOS Transistors Opportunity
8.3 Scope and Limitations of Conventional CMOS Technology
8.4 Conclusion
8.5 Acknowledgment
References
9 Mathematical Approach for the Foundation of Negative Capacitance Technology
9.1 Generalized Classification of Field Effect Devices Based On Ferroelectric
9.2 Mathematical Modeling of Negative Capacitance Science and Technology
9.3 Conclusion
Acknowledgment
References
Index