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Near-interface doping by ion implantation in Cu(In,Ga)Se2 solar cells

✍ Scribed by J. Haarstrich; H. Metzner; C. Ronning; T. Rissom; C.A. Kaufmann; H.W. Schock; W. Mannstadt; E. Rudigier-Voigt; V. Scheumann


Book ID
113936812
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
395 KB
Volume
519
Category
Article
ISSN
0040-6090

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Temperature-dependent measurements of the currentΒ±voltage characteristics and of the junction admittance of ZnO/CdS/Cu(In,Ga)Se 2 heterojunction solar cells are presented, together with numerical modelling of these experimental results. We explain the cross-over between dark and illuminated currentΒ±