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Near-Field Optical Imaging and Spectroscopy of Single GaAs Quantum Wires

✍ Scribed by Emiliani, V. ;Intonti, F. ;Lineau, Ch. ;Elsaesser, T. ;N�tzel, R. ;Ploog, K.H.

Publisher
John Wiley and Sons
Year
2002
Tongue
English
Weight
226 KB
Volume
190
Category
Article
ISSN
0031-8965

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✦ Synopsis

Low-dimensional semiconductor structures grown by molecular beam epitaxy on a patterned (311)A GaAs substrate are investigated by near-field spectroscopy at a temperature of 10 K. In particular, the two-dimensional potential profiles of quantum wire and coupled wire-dot structures are determined from photoluminescence (PL) measurements with a spatial resolution of 150 nm. Also presented is an optical method for investigating carrier transport in low-dimensional systems involving performing spatially resolved PL excitation measurements on the wire-dot structure.

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