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Near band-edge luminescence studies of the effect of interfacial step distribution and alloy disorder in ultrathin GaAsAxGa1−xAs(100) single quantum wells grown by MBE under RHEED determined conditions

✍ Scribed by F. Voillot; J.Y. Kim; W.C. Tang; A. Madhukar; P. Chen


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
623 KB
Volume
3
Category
Article
ISSN
0749-6036

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