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Near ballistic transport in a nonparabolic-band structure for n- and p-GaAs

✍ Scribed by Lee, J.; Su, C.B.


Book ID
114594112
Publisher
IEEE
Year
1982
Tongue
English
Weight
282 KB
Volume
29
Category
Article
ISSN
0018-9383

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Ballistic transport and Andreev resonanc
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We have formed superconducting contacts in which Cooper pairs incident from a thick In layer must move through a thin Nb layer to reach a semiconductor, either InAs or low temperature grown (LTG) GaAs. The effect of pair tunneling through the Nb layer can be seen by varying the temperature through t