Nature of the native deep localized defect recombination centers in the chalcopyrite and orthorhombic AgInS[sub 2]

Pressure Dependence of Defect Emissions

Pressure Dependence of Defect Emissions and the Appearance of Pressure-Induced Deep Centers in Chalcopyrite Alloys AgxCu1—xGaS2

✍ In-Hwan Choi; P.Y. Yu 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 142 KB 👁 2 views

We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag x Cu 1--x GaS 2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy conce