Narrowband Landau emission from high purity GaAs layers grown by molecular beam epitaxy

✍ Scribed by C. Wirner; G. Strasser; C. Steeb; E. Gornik; H. Riechert

• Book ID: 103952076
• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 256 KB
• Volume: 168
• Category: Article
• ISSN: 0921-5093
• DOI: 10.1016/0921-5093(93)90282-j

✦ Synopsis

We analysed narrowband Landau emission from a high purity GaAs layer grown by molecular beam epitaxy using a magnetic field tuned InSb detector. The cyclotron resonance and impurity level transitions of the lnSb detector are clearly resolved. Comparison of the detector linewidth with results from a fast Fourier transform spectrometer yields a narrow GaAs emitter linewidth of 1.3 + 0.3 cm-1 which is in good agreement with cyclotron resonance transmission data. This indicates very high quality of the GaAs material with very low impurity compensation. Only two types of impurity, silicon and sulphur, are detected in the extrinsic photoresponse spectrum.