Narrow band gap base heterojunction bipolar transistors using SiGe alloys

✍ Scribed by S.S. Iyer; G.L. Patton; D.L. Harame; J.M.C. Stork; E.F. Crabbé; B.S. Meyerson

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 644 KB
• Volume: 184
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(90)90409-7