<p>This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on βNanoscaled Semiconductor-On-Insulator Structures and devicesβ held in the Tourist and Recreation Centre βSudakβ (Crimea, Ukraine) from 15 to 19 October 2006
Nanoscaled Semiconductor-On-Insulator Structures and Devices
β Scribed by Lysenko V.S., Nazarov A.N., Hall S.
- Year
- 2007
- Tongue
- English
- Leaves
- 380
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films.
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Compound Semiconductor Devices provides a comprehensive insight into today's standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto s