<p><P></P><P><STRONG><EM>NANOSCALE TRANSISTORS: Device Physics, Modeling and Simulation</EM></STRONG> describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures an
Nanoscale transistors: Device Physics, Modeling and Simulation
โ Scribed by Mark Lundstrom, Jing Guo
- Publisher
- Springer
- Year
- 2005
- Tongue
- English
- Leaves
- 222
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
<span>Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors w
The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular sca
The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to
<p>This textbook comprehensively covers on-chip interconnect dimension and application of carbon nanomaterials for modeling VLSI interconnect and buffer circuits.</p> <p></p> <p>It provides analysis of ultra-low power high speed nano-interconnects based on different facets like material modeling, ci