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Nanoscale surface and interface engineering: Why plasma-aided?

✍ Scribed by K. Ostrikov; S. Xu; S.Y. Huang; I. Levchenko

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
1006 KB
Volume
202
Category
Article
ISSN
0257-8972

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✦ Synopsis

This contribution provides arguments why and in which cases low-temperature plasmas should be used for nanoscale surface and interface engineering and discusses several advantages offered by plasma-based processes and tools compared to neutral gas fabrication routes. Relevant processes involve nanotexturing (etching, sputtering, nanostructuring, pre-patterning, etc.) and composition/structure control at nanoscales (phases, layering, elemental presence, doping, functionalization, etc.) and complex combinations thereof. A case study in p-Si/n-Si solar cell junction exemplifies a successful use of inductively coupled plasma-assisted RF magnetron sputtering for nanoscale fabrication of a bi-layered stack of unconventionally doped highlycrystalline silicon nanofilms with engineered high-quality interfaces.

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