A new technique for the preparation of h
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Giorgio Sberveglieri; Silvio Groppelli; Paolo Nelli; Alberto Camanzi
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Article
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1991
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Elsevier Science
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English
โ 456 KB
H, in air can be detected with sensors based on semiconductor oxides. A new technique for growing a hydrogen sensor based on SnO,(Bi,O,) thin films is presented here. The thin films have a thickness of 200-250 nm and the metals are in the atomic ratio Bi/Sn.= (3-S) at.%](97-95) at.%. The two metals