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Nano-scale dislocation patterning in PbTe on PbSe (1 0 0) heteroepitaxy studied by UHV scanning tunneling microscopy

✍ Scribed by K Wiesauer; G Springholz


Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
181 KB
Volume
13
Category
Article
ISSN
1386-9477

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✦ Synopsis


Strain relaxation in the heteroepitaxial system PbTe on PbSe (1 0 0) is studied using scanning tunnelling microscopy. It is shown that a 2D surface morphology is sustained for all PbTe layer thicknesses, and that strain relaxation takes place by pure edge-type misΓΏt dislocations. The dislocations are found to form an extremely regular square network. Its uniformity is based on the existence of a high dislocation mobility within the interface and an e ective repulsive interaction between neighbouring dislocations. Because of its high regularity this nano-scale dislocation pattern could serve as template for the direct synthesis of self-assembled nanostructures.


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