n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-Al x Ga 1− x N electron-blocking layer

✍ Scribed by Zhang, Hezhi; Shen, Rensheng; Liang, Hongwei; Liu, Yuanda; Liu, Yang; Xia, Xiaochuan; Du, Guotong

• Book ID: 120412422
• Publisher: Institute of Physics
• Year: 2013
• Tongue: English
• Weight: 875 KB
• Volume: 46
• Category: Article
• ISSN: 0022-3727
• DOI: 10.1088/0022-3727/46/6/065101