## Abstract n‐Type diamond formation is one of the most important issues for the electronic application of diamond. Phosphorus is the best n‐type dopant candidate at the moment. We have succeeded in growing high‐quality phosphorus‐doped diamond thin films on {111} diamond substrates. Although the i
✦ LIBER ✦
N-type P-doped polycrystalline diamond
✍ Scribed by Nesládek, M. ;Haenen, K. ;D'Haen, J. ;Koizumi, S. ;Kanda, H.
- Publisher
- John Wiley and Sons
- Year
- 2003
- Tongue
- English
- Weight
- 288 KB
- Volume
- 199
- Category
- Article
- ISSN
- 0031-8965
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## Abstract Nanocrystalline diamond is an interesting material for MEMS applications especially due to its outstanding mechanical, electrical and electrochemical properties. The current choice for doping is boron, resulting in p‐type conduction. It has two difficulties: firstly, at high concentrati